Arrays Of Nonvolatile Memory Cells

ABSTRACT

Disclosed is an array of nonvolatile memory cells includes five memory cells per unit cell. Also disclosed is an array of vertically stacked tiers of nonvolatile memory cells that includes five memory cells occupying a continuous horizontal area of 4F 2  within an individual of the tiers. Also disclosed is an array of nonvolatile memory cells comprising a plurality of unit cells which individually comprise three elevational regions of programmable material, the three elevational regions comprising the programmable material of at least three different memory cells of the unit cell. Also disclosed is an array of vertically stacked tiers of nonvolatile memory cells that includes a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells. Other embodiments and aspects are disclosed.

TECHNICAL FIELD

Embodiments disclosed herein pertain to arrays of nonvolatile memorycells.

BACKGROUND

Memory is one type of integrated circuitry, and is used in computersystems for storing data. Such is usually fabricated in one or morearrays of individual memory cells. The memory cells might be volatile,semi-volatile, or nonvolatile. Nonvolatile memory cells can store datafor extended periods of time, in many instances including when thecomputer is turned off. Volatile memory dissipates and thereforerequires being refreshed/rewritten, in many instances multiple times persecond. Regardless, the smallest unit in each array is termed as amemory cell and is configured to retain or store memory in at least twodifferent selectable states. In a binary system, the states areconsidered as either a “0” or a “1”. In other systems, at least someindividual memory cells may be configured to store more than two levelsor states of information.

Integrated circuitry fabrication continues to strive to produce smallerand denser integrated circuits. Accordingly, the fewer components anindividual circuit device has, the smaller the construction of thefinished device can be. Likely the smallest and simplest memory cellwill be comprised of two current conductive electrodes having aprogrammable material received there-between. The programmable materialis selected or designed to be configured in a selected one of at leasttwo different resistive states to enable storing of information by anindividual memory cell. The reading of the cell comprises determinationof which of the states the programmable material is in, and the writingof information to the cell comprises placing the programmable materialin a predetermined resistive state. Some programmable materials retain aresistive state in the absence of refresh, and thus may be incorporatedinto nonvolatile memory cells.

Some programmable materials may contain mobile charge carriers largerthan electrons and holes, for example ions in some example applications.Regardless, the programmable materials may be converted from one memorystate to another by moving the mobile charge carriers therein to alter adistribution of charge density within the programmable materials. Someexample memory devices that utilize ions as mobile charge carriers areresistive RAM (RRAM) cells, which can include classes of memory cellscontaining multivalent oxides, and which can include memristors in somespecific applications. Other example memory devices that utilize ions ascharge carriers are programmable metallization cells (PMCs); which maybe alternatively referred to as a conductive bridging RAM (CBRAM),nanobridge memory, or electrolyte memory.

The RRAM cells may contain programmable material sandwiched between apair of electrodes. The programming of the RRAM cells may comprisetransitioning the programmable material between first a memory state inwhich charge density is relatively uniformly dispersed throughout thematerial and a second memory state in which the charge density isconcentrated in a specific region of the material (for instance, aregion closer to one electrode than the other).

A PMC may similarly have programmable material sandwiched between a pairof current conductive electrodes. The PMC programmable materialcomprises ion conductive material, for example a suitable chalcogenideor any of various suitable oxides. A suitable voltage applied across theelectrodes generates current conductive super-ionic clusters orfilaments. Such result from ion transport through the ion conductivematerial which grows the clusters/filaments from one of the electrodes(the cathode), through the ion conductive material, and toward the otherelectrode (the anode). The clusters or filaments create currentconductive paths between the electrodes. An opposite voltage appliedacross the electrodes essentially reverses the process and thus removesthe current conductive paths. A PMC thus comprises a high resistancestate (corresponding to the state lacking a current conductive filamentor clusters between the electrodes) and a low resistance state(corresponding to the state having a current conductive filament orclusters between the electrodes), with such states being reversiblyinterchangeable with one another.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic isometric view of an array of nonvolatilememory cells in accordance with an embodiment of the invention.

FIG. 2 is a fragmentary view of a portion of the array of FIG. 1.

FIG. 3 is a fragmentary view of FIG. 2.

FIG. 4 is a top view of FIG. 2.

FIG. 5 is a sectional view taken through line 5-5 in FIG. 4.

FIG. 6 is a diagrammatic isometric view of an empty unit cell used tocharacterize some embodiments of the invention.

FIG. 7 is a diagrammatic isometric view of a unit cell of the array ofFIG. 1 in accordance with some embodiments of the invention.

FIG. 8 is a diagrammatic isometric view of an array of nonvolatilememory cells in accordance with an embodiment of the invention.

FIG. 9 is a fragmentary view of a portion of the array of FIG. 8.

FIG. 10 is diagrammatic top view of a portion of FIG. 8.

FIG. 11 is a diagrammatic view of a unit cell of the array of FIG. 8 inaccordance with some embodiments of the invention.

FIG. 12 is a sectional view taken through line 12-12 in FIG. 10.

FIG. 13 is a diagrammatic isometric view of an array of nonvolatilememory cells in accordance with an embodiment of the invention.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Embodiments of the invention include arrays of nonvolatile memory cells.Some example embodiments are initially described with reference to FIGS.1-5 of an array 10 of vertically stacked tiers of such memory cells.FIG. 1 shows a portion of an array area within which a plurality ofnonvolatile memory cells has been fabricated. Logic circuitry (notshown) would typically be fabricated outside of the array area. Controland/or other peripheral circuitry (not shown) for operating the memoryarray may or may not fully or partially be received within the arrayarea, with an example array area as a minimum encompassing all of thememory cells of a given array/sub-array. Further, multiple sub-arraysmight also be fabricated and operated independently, in tandem, orotherwise relative one another. As used in this document, a “sub-array”may also be considered as an array.

FIG. 1 depicts three vertically stacked tiers 12, 14, 16 of memorycells. More or fewer tiers may be used. Accordingly, one or more tiersmay be received elevationally outward of tier 12 and/or elevationallyinward of tier 16. Regardless, array 10 would be fabricated relative toa suitable base substrate (not shown) which may be homogenous ornon-homogenous, for example comprising multiple different compositionmaterials and/or layers. As an example, such may comprise bulkmonocrystalline silicon and/or a semiconductor-on-insulator substrate.As an additional example, such may comprise dielectric material havingconductive contacts or vias formed therein which extend vertically orotherwise into current conductive electrical connection with electronicdevice components, regions, or material received elevationally inward ofthe dielectric material. In this document, vertical is a directiongenerally orthogonal to a primary surface relative to which thesubstrate is processed during fabrication and which may considered todefine a generally horizontal direction. Further, “vertical” and“horizontal” as used herein are generally perpendicular directionsrelative one another independent of orientation of the substrate inthree dimensional space. Further in this document, “elevational” and“elevationally” are with reference to the vertical direction from a basesubstrate upon which the circuitry is fabricated. The base substrate mayor may not be a semiconductor substrate. In the context of thisdocument, the term “semiconductor substrate” or “semiconductivesubstrate” is defined to mean any construction comprising semiconductivematerial, including, but not limited to, bulk semiconductive materialssuch as a semiconductive wafer (either alone or in assemblies comprisingother materials thereon), and semiconductive material layers (eitheralone or in assemblies comprising other materials). The term “substrate”refers to any supporting structure, including, but not limited to, thesemiconductive substrates described above. The array structure of FIG. 1would likely be encompassed within/encapsulated by dielectric materialwhich is not shown in any of the figures for clarity of operative memorycell components within the array.

Vertical tiers 12, 14, 16 may be of the same or different respectiveconstruction(s). In one embodiment, all of such are of the sameconstruction, for example to achieve an ultimate highest density and/orfor ease in fabrication. Regardless, at least some of the individualvertical tiers may be characterized by certain attributes exampleembodiments of which are initially described with reference to FIGS.1-5. FIGS. 2-5 are views of the same portion of FIG. 1 which may beconsidered as a region of interest with respect to some embodiments ofthe invention. Only a portion of tier 12 is shown in FIGS. 2-5, andcomponents of the immediately lower adjacent tier 14 are not shown forclarity. In one embodiment, FIGS. 2-5 may be considered as comprising acontinuous volume of the array 10 of FIG. 1, and in one embodiment maybe considered as depicting or encompassing an isometric view of a “unitcell” of array 12 which is described below. Regardless, FIG. 5 is anelevational end-view looking from the left and straight onto FIG. 2,whereas FIG. 4 is a top-down view of FIG. 2. FIG. 3 is a partial andfragmentary partial view of FIG. 2.

Individual vertical tiers comprise an elevationally outer tier 18 (FIGS.2, 3, and 5) and an elevationally inner tier 20 of respectivepluralities of horizontally oriented first electrode lines.Specifically, outer tier 18 has first electrode lines 22 and inner tier20 has first electrode lines 24. First electrode lines 22 of outer tier18 cross with respect to first electrode lines 24 of inner tier 20, andin one embodiment at about 90°.

A plurality of vertically oriented second electrode lines 26 extendsthrough inner tier 20 and outer tier 18. Individual of verticallyoriented second electrode lines 26 extend between immediately adjacentrespective pairs of the first electrode lines in the inner tier and inthe outer tier. For example in FIGS. 2-5, the illustrated secondelectrode line 26 extends between the depicted immediately adjacent pairof first electrode lines 22 of outer tier 18 and extends between thedepicted immediately adjacent pair of first electrode lines 24 of innertier 20. Vertically oriented second electrode lines 26 also extendelevationally inward and outward through other of the vertically stackedtiers of nonvolatile memory cells. Vertically oriented second electrodelines 26 may be considered as having a first pair of opposing lateralsides 30 and a second pair of opposing lateral sides 32. In oneembodiment and as shown, first pair of opposing lateral sides 30 andsecond pair of opposing lateral sides 32 are oriented at about 90°relative one another. In one embodiment, the first electrode lines aredata/sense lines and the second electrode lines are access lines.

The first and second electrode lines comprise current conductivematerial, may be homogenous or non-homogenous, and may be of the samecomposition or of different compositions. In the context of thisdocument, “current conductive material” is a composition where electriccurrent flow would inherently occur therein predominantly by movement ofsubatomic positive and/or negative charges when such are generated asopposed to predominantly by movement of ions. Example current conductivematerials are elemental metals, alloys of elemental metals, currentconductive metal compounds, and conductively doped semiconductivematerial, including any combinations thereof.

Programmable material 35 is received between each of one of the pairs ofopposing lateral sides of second electrode line 26 and one of the firstelectrode lines of one of the inner and outer tiers. Programmablematerial is also received between each of the other pair of opposinglateral sides of second electrode line 26 and the first electrode linesof the other of the inner and outer tiers. In FIGS. 1-5, exampleprogrammable material 35 is received between each of lateral sides 30and different adjacent first electrode lines 22 in outer tier 18, andalso between each of lateral sides 32 and different adjacent firstelectrode lines 24 in inner tier 20. Programmable material 35 mayentirely circumferentially encircle individual vertically orientedsecond electrode lines 26 within one or both of the inner and outertiers, with full encircling being shown with respect to both such tiers18 and 20 in the example embodiments of FIGS. 1-5. In one embodiment andas shown, programmable material 35 is also received between individualfirst electrode lines 22 of outer tier 18 and individual first electrodelines 24 of inner tier 20 where such cross.

Regardless, programmable material 35 may be solid, gel, amorphous,crystalline, or any other suitable phase, and may be homogenous ornon-homogenous. Any existing or yet-to-be developed programmablematerial may be used, with only some examples being provided below.

One example programmable material is ion conductive material. Examplesuitable such materials comprise chalcogenide-type (for instance,materials comprising one or more of germanium, selenium, antimony,tellurium, sulfur, copper, etc.; with example chalcogenide-typematerials being Ge₂Sb₂Te₅, GeS₂, GeSe₂, CuS₂, and CuTe) and/or oxidessuch as zirconium oxide, hafnium oxide, tungsten oxide, copper oxide,niobium oxide, iron oxide, silicon oxide (specifically, silicondioxide), gadolinium oxide, etc. capable of inherently (or withadditive) supporting electrolyte behavior. Such may have silver, copper,cobalt, and/or nickel ions, and/or other suitable ions, diffused thereinfor ionic conduction, analogously to structures disclosed in U.S. Pat.No. 7,405,967 and U.S. Patent Publication Number 2010/0193758.

Additional example programmable materials include multi-resistive statemetal oxide-comprising material. Such may comprise, for example, atleast two different layers or regions generally regarded as orunderstood to be active or passive regions, although not necessarily.Alternately, such may only comprise active material. Example active cellregion compositions which comprise metal oxide and can be configured inmulti-resistive states include one or a combination ofSr_(x)Ru_(y)O_(z), Ru_(x)O_(y), and In_(x)Sn_(y)O_(z). Other examplesinclude MgO, Ta₂O₅, SrTiO₃, SrZrO₃, BaTiO₃, Ba_((1-x))Sr_(x)TiO₃,ZrO_(x) (perhaps doped with La), and CaMnO₃ (doped with one or more ofPr, La, Sr, or Sm). Example passive cell region compositions include oneor a combination of Al₂O₃, TiO₂, and HfO₂. Regardless, a programmablematerial composite might comprise additional metal oxide or othermaterials not comprising metal oxide. Example materials andconstructions for a multi-resistive state region comprising one or morelayers including a programmable metal oxide-comprising material aredescribed and disclosed in U.S. Pat. Nos. 6,753,561; 7,149,108;7,067,862; and 7,187,201, as well as in U.S. Patent ApplicationPublication Nos. 2006/0171200 and 2007/0173019. Further as isconventional, multi-resistive state metal oxide-comprising materialsencompass filament-type metal oxides, ferroelectric metal oxides andothers, and whether existing or yet-to-be developed, as long asresistance of the metal oxide-comprising material can be selectivelychanged.

The programmable material may comprise memristive material. As anexample, such material may be statically programmable semiconductivematerial which comprises mobile dopants that are received within adielectric such that the material is statically programmable between atleast two different resistance states. At least one of the statesincludes localization or gathering of the mobile dopants such that adielectric region is formed and thereby provides a higher resistancestate. Further, more than two programmable resistance states may beused. In the context of this document, a “mobile dopant” is a component(other than a free electron) of the semiconductive material that ismovable to different locations within said dielectric during normaldevice operation of repeatedly programming the device between at leasttwo different static states by application of voltage differential tothe pair of electrodes. Examples include atom vacancies in an otherwisestoichiometric material, and atom interstitials. Specific example mobiledopants include oxygen atom vacancies in amorphous or crystalline oxidesor other oxygen-containing material, nitrogen atom vacancies inamorphous or crystalline nitrides or other nitrogen-containing material,fluorine atom vacancies in amorphous or crystalline fluorides or otherfluorine-containing material, and interstitial metal atoms in amorphousor crystalline oxides. More than one type of mobile dopant may be used.Example dielectrics in which the mobile dopants are received includesuitable oxides, nitrides, and/or fluorides that are capable oflocalized electrical conductivity based upon sufficiently high quantityand concentration of the mobile dopants. The dielectric within which themobile dopants are received may or may not be homogenous independent ofconsideration of the mobile dopants. Specific example dielectricsinclude TiO₂, AlN, and/or MgF₂. Example programmable materials thatcomprise oxygen vacancies as mobile dopants may comprise a combinationof TiO₂ and TiO_(2-x) in at least one programmed resistance statedepending on location of the oxygen vacancies and the quantity of theoxygen vacancies in the locations where such are received. An exampleprogrammable material that comprises nitrogen vacancies as mobiledopants is a combination of AlN and AlN_(1-x) in at least one programmedstate depending on location of the nitrogen vacancies and the quantityof the nitrogen vacancies in the locations where such are received. Anexample programmable material that comprises fluorine vacancies asmobile dopants may is a combination of MgF₂ and MgF_(2-x) in at leastone programmed resistance state depending on location of the fluorinevacancies and the quantity of the fluorine vacancies in the locationswhere such are received. As another example, the mobile dopants maycomprise aluminum atom interstitials in a nitrogen-containing material.

Still other example programmable materials include polymer materialssuch as Bengala Rose, AlQ₃Ag, Cu-TCNQ, DDQ, TAPA, and fluorescine-basedpolymers.

The programmable material, as well as other materials disclosed herein,may be deposited by any existing or yet-to-be-developed technique(s).Examples include vapor phase deposition (i.e., chemical vapor phasedeposition, atomic layer deposition, and/or physical vapor deposition)and/or liquid phase deposition, either of which may be selective ornon-selective to one or more underlying materials. In exampleliquid-phase depositions, surface mediated transport (capillarity) andor electrokinetic flow may occur. Wetting agents, surfactants, or othersurface modification agents may or may not be used. Further andregardless of deposition method, any deposited material may besubsequently treated, for example annealed or irradiated.

The embodiments of FIGS. 1-5 depict programmable material 35 as beingreceived directly against each of the conductive lines between whichsuch is received. In this document, a material or structure is “directlyagainst” another when there is at least some physical touching contactof the stated materials or structures relative one another. In contrast,“over” encompasses “directly against” as well as constructions whereintervening material(s) or structure(s) result(s) in no physicaltouching contact of the stated materials or structures relative oneanother. Alternately, one or more additional materials, such as one ormore select devices, may be received between the programmable materialand one or both of such crossing lines. Any existing oryet-to-be-developed select device may be used, with transistors anddiodes being but two examples.

Immediately adjacent electrode lines may be spaced from one another toprevent permanent shorting of two such adjacent lines relative to oneanother, for example by a programmable material 35 and/or by dielectricmaterial. In one embodiment, the first electrode lines of the outer tierare everywhere elevationally spaced from the first electrode lines ofthe inner tier within the array. In one embodiment, such separationoccurs at least in part by programmable material 35 being elevationallybetween individual first electrode lines 22 of outer tier 18 andindividual first electrode lines 24 of inner tier 20 where such cross.

An embodiment of the invention comprises an array of vertically stackedtiers of nonvolatile memory cells comprising five memory cells occupyinga continuous horizontal area of 4F² within an individual of the tiers.The embodiment of FIGS. 1-5 is but one example such embodiment. In thisdocument, “F” is the minimum lateral feature dimension of the smallestfeature that is formed using feature edges of a mask pattern that isreceived outwardly of material from which such smallest features areformed. For example, FIG. 4 diagrammatically depicts a continuoushorizontal area “A” comprised of a bold-lined square which is 2F on eachside, thereby having an area of 4F². Minimum feature width “F” in theFIG. 4 example is characterized by the depicted individual line width offirst electrode lines 22 and the width of a space between immediatelyadjacent such lines. In this particular example, the depicted minimumline width and minimum space width are equal to one another, and are F.Individual memory cells comprise immediately overlapping adjacentelectrode lines having programmable material 35 there-between, with fivesuch memory cells within area A in FIGS. 2-4 being designated asindividual memory cells 1, 2, 3, 4, and 5 as small dashed circles.Circles 1, 2, 3, 4, and 5 are small for clarity in the drawings, withthe memory cells of course encompassing as a minimum all of the surfacearea of the facing respective electrodes having programmable material 35there-between.

An embodiment of the invention includes an array of vertically stackedtiers of nonvolatile memory cells which comprises some continuous volumehaving a combination of a plurality of vertically oriented memory cellsand a plurality of horizontally oriented memory cells. In the context ofthis document, a vertically oriented memory cell is characterized bypredominant current flow through the programmable material in thehorizontal direction. Further in the context of this document, ahorizontally oriented memory cell is characterized by predominantcurrent flow through the programmable material in the verticaldirection. Historically, horizontal cross point memory cells are sonamed because their opposing electrodes are typically horizontallyoriented yet vertically opposing one another. Vertical cross pointmemory cells were historically so named as their opposing electrodeswere laterally oriented relative one another, with one of the electrodesbeing elongated and running in the vertical direction. However in thecontext of this document, reference to vertical or horizontalorientation of a memory cell is only relative to predominant currentflow through the programmable material regardless of orientation of theelectrodes. Regardless, in one embodiment, the continuous volume has acombination of entirely vertically oriented memory cells and entirelyhorizontally oriented memory cells. In the context of this document, amemory cell is entirely vertically oriented if all current flow to,from, and between the electrodes is in the horizontal direction. Furtherin the context of this document, a memory cell is entirely horizontallyoriented if all current flow to, from, and between the electrodes is inthe vertical direction.

The embodiment of FIGS. 1-5 is but one example embodiment having acombination of vertically oriented memory cells and horizontallyoriented memory cells. For example, memory cells 1 within the array arehorizontally oriented memory cells, whereas memory cells 2, 3, 4, and 5are vertically oriented memory cells. Further, memory cell 1 is entirelyhorizontally oriented, and memory cells 2, 3, 4, and 5 are entirelyvertically oriented. Regardless, in one embodiment, the array comprisesmore vertically oriented memory cells than horizontally oriented memorycells. In one embodiment, there is one horizontally oriented memory cellfor every four vertically oriented memory cells. In one embodiment, allof the array comprises a combination of vertically oriented memory cellsand horizontally oriented memory cells as opposed to just somecontinuous volume thereof. The depicted and described embodiments ofFIGS. 1-5 are but one example array having each of these just-statedattributes.

In one embodiment, an array of nonvolatile memory cells comprises fivememory cells per unit cell. In the context of this document, a “unitcell” is the simplest polyhedron that embodies all structuralcharacteristics of, and by three-dimensional repetition makes up, alattice of the array. Consider, for example, FIGS. 4, 6 and 7. FIG. 4depicts a horizontal area defined by 2F by 2F sides. Translating sucharea inwardly within memory cell tier 12 to the base of first electrodelines 24 in lower tier 20 results in a unit cell 40 in FIGS. 6 and 7 ofthe array 10 of FIG. 1. For clarity, unit cell 40 is shown as beingempty in FIG. 6 and as containing memory cell components 22, 24, 26, and35 in FIG. 7.

FIGS. 1-7 depict an embodiment wherein unit cell 40 is a hexahedronwhich may or may not be a cube, and is not a perfect cube in thedepicted embodiment. FIGS. 1-7 also depict an embodiment where there arefive and only five memory cells per unit cell 40. Nevertheless andregardless, unit cell 40 in the form of a hexahedron in one embodimentmay be considered as having two opposing faces 42, 44 and four cornervolumes 45, 46, 47 and 48 extending between opposing faces 42 and 44.(FIG. 6). In one embodiment, programmable material for four of thememory cells extends from one or the other of such opposing faces toinside the hexahedron within a single of the four corner volumes. Forexample with respect to FIG. 7, corner volume 46 constitutes such asingle corner volume for and within which programmable material 35 ofmemory cells 2, 3, 4, and 5 is received. In one embodiment, programmablematerial of another memory cell other than the four is received withinthe corner volume of the hexahedron that is diagonally opposite thesingle corner volume. For example in FIG. 7, memory cell 1 constitutessuch an example another memory cell within corner volume 48 which isdiagonally opposite corner volume 46.

An embodiment of the invention encompasses an array of nonvolatilememory cells comprising a plurality of unit cells which individuallycomprise three elevational regions of programmable material. Suchregions comprise the programmable material of at least three differentmemory cells of a unit cell. In one embodiment, the three regionscomprise the programmable material of at least four different memorycells of the unit cell, and in one embodiment comprise the programmablematerial of five different memory cells. The above-described embodimentof FIGS. 1-7 is but one example embodiment having each of thesejust-stated attributes. For example, consider FIG. 5 as showing threeelevational regions 18, 50, 20 with respect to a single unit cell 40 asrepresented by FIGS. 6 and 7. Each of such regions comprisesprogrammable material 35 of at least three different memory cells of theunit cell. In other words, at least one different memory cell isincluded in each of the three regions. For example, elevational region18 comprises programmable material of memory cells 3 and 4, elevationalregion 20 comprises programmable material of memory cells 2 and 5, andelevational region 50 comprises programmable material of memory cell 1.

In one embodiment, the elevational regions extend laterally parallel oneanother within individual of the unit cells, with FIGS. 1-7 depictingone such example. Such also depicts an embodiment wherein theelevational regions are of constant respective elevational thicknesswithin each of the unit cells. In the depicted examples, the collectiveelevational regions are of at least two different elevationalthicknesses wherein, for example, the elevational thickness of region 18is the same as that of region 20. Such also constitutes an exampleembodiment wherein an elevationally outermost of the three regions (18)and an elevationally innermost of the three regions (20) are of the samethickness within individual of the unit cells, and wherein each of suchare thicker than a middle region (50) sandwiched there-between.

FIG. 1 depicts an example embodiment wherein immediately adjacent pairs12/14 and 14/16 of vertically stacked tiers of memory cells are spacedapart from each other such that no programmable material is receivedthere-between. Accordingly, the space between such adjacent tiers 12 &14 and 14 & 16 may be filled with/by dielectric material towardsminimizing parasitic electrical interaction between adjacent of thepairs of vertically stacked tiers of memory cells. FIG. 8 depicts analternate embodiment array 10 a. Like numerals from the first-describedembodiment have been used where appropriate, with some constructiondifferences being indicated with the suffix “a” or with differentnumerals. In array 10 a, programmable material 35 a is receivedelevationally between the first electrode lines 24 of the elevationallyinner tier 20 of one of the pair of immediately adjacent of thevertically stacked tiers of memory cells and the first electrode lines22 of the elevationally outer tier 18 of the other of the pair ofimmediately adjacent of the vertically stacked tiers of memory cells.Programmable material 35 a may be of the same composition as or ofdifferent composition from that of programmable material 35.

The embodiment of FIG. 8 may be considered as extending the unit celleither of downwardly or upwardly to encompass one of the regions ofprogrammable material 35 a that is received between the immediatelyadjacent pairs of vertically stacked tiers of memory cells 12, 14, 16.Accordingly in such example, another memory cell may be added per unitcell wherein each unit cell contains six memory cells with, in oneembodiment and as shown, such occupying a horizontal area of 4F². See,for example, FIGS. 9 and 10 depicting memory cells 1, 2, 3, 4, 5, 6, andFIG. 11 depicting a unit cell 40 a. FIGS. 9 and 10 are the same as FIGS.3 and 4, respectively, but diagrammatically add designation of the addedmemory cell 6 occupied within area A. Memory cell 6 encompasses a firstelectrode line 24 of one tier (i.e., tier 12), a first electrode line 22of the immediately next lower tier (14), and programmable material 35 asandwiched there-between. FIG. 11 is the same as FIG. 7, but additionalshows unit cell 40 a extending downwardly to encompass programmablematerial 35 a. Such also constitutes an example embodiment wherein thereare two horizontally oriented memory cells (1 and 6) for every fourvertically oriented memory cells (2, 3, 4, and 5). Such also depicts butone example embodiment of six memory cells within a unit cell whereintwo memory cells other than the first-stated four are received in acorner volume of the hexahedron which is diagonally opposite the singlecorner volume within which the first-stated four memory cells arereceived. Such also constitutes yet another elevational region 60 (FIG.12) of programmable material 35 a which comprises another memory cell(memory cell 6) of the unit cell.

FIG. 8 depicts an example embodiment wherein programmable material 35/35a is largely only received between immediately adjacent conductiveelectrode lines. FIG. 13 depicts another example array 10 b. Likenumerals from the above-described embodiments have been used whereappropriate, with some construction differences being indicated with thesuffix “b”. In array 10 b, programmable material 35 b has been depositedeverywhere as a blanketing conformal layer.

An individual unit cell 40 of memory array 10 may be considered ascomprising five electrode lines, four of which run horizontally relativeto either “x” or “y” axes. For an individual tier 12, 14, 16 designatedas “n”, those lines 24 which run relative to the “x” axis areadditionally individually designated as VR_(i) and VR_(i+1) in FIG. 4.Those lines 22 which run relative to the “y” axis are additionallyindividually designated as VC_(j) and VC_(j+1) in FIG. 4. The fifth lineis encompassed by a single vertically extending second electrode line 26which is additionally designated as VV in FIG. 4. Table I below showsexample relative absolute values of relative voltages V that may be usedin reading, writing or erasing any individual of cells 1, 2, 3, 4, 5 ofFIGS. 1-7 within an individual tier “n”. The example Table I biasingscheme may rely on non-linearity of an individual cell's current-voltagecharacteristics, which may be intrinsic or through select devicesreferred to above, for example, diodes.

TABLE I All other Horizontal X Horizontal Y Vertical VR, VC, VR_(i,n)VR_(i+1,n) VC_(j,n) VC_(j+1,n) VV_(i,j) and VV Cell 1 0 ½ V V ½ V ½ V ½V Cell 2 ½ V ½ V 0 ½ V V ½ V Cell 3 0 ½ V ½ V ½ V V ½ V Cell 4 ½ V 0 ½ V½ V V ½ V Cell 5 ½ V ½ V ½ V 0 V ½ V

Table II below is an analogous corresponding table for memory cells 1,2, 3, 4, 5, and 6 of the embodiments of FIGS. 8-13 for tiers n (12) andn+1 (14) in FIG. 9.

TABLE II All other Horizontal X_(n) Horizontal Y_(n) Vertical HorizontalX_(n+1) VR, VC, VR_(i,n) VR_(i+1,n) VC_(j,n) VC_(j+1,n) VV_(i,j)VR_(i,n+1) VR_(i+1,n+1) and VV Cell 1 0 ½ V V ½ V ½ V ½ V ½ V ½ V Cell 2½ V ½ V 0 ½ V V ½ V ½ V ½ V Cell 3 0 ½ V ½ V ½ V V ½ V ½ V ½ V Cell 4 ½V 0 ½ V ½ V V ½ V ½ V ½ V Cell 5 ½ V ½ V ½ V 0 V ½ V ½ V ½ V Cell 6 ½ V½ V V ½ V ½ V 0 ½ V ½ V

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. An array of nonvolatile memory cells comprising a repetition of aunit cell, the unit cell being the simplest polyhedron that embodies allstructural characteristics of, and by three-dimensional repetition makesup, a lattice of the array; the array comprising six memory cells perunit cell.
 2. The array of claim 6 wherein there are only five memorycells per unit cell.
 3. The array of claim 1 wherein the six memorycells occupy a horizontal area of 4F². 4-5. (canceled)
 6. An array ofnonvolatile memory cells comprising a repetition of a unit cell, theunit cell being the simplest polyhedron that embodies all structuralcharacteristics of, and by three-dimensional repetition makes up, alattice of the array; the array comprising five memory cells per unitcell, the array comprising a plurality of vertically oriented memorycells and a plurality of horizontally oriented memory cells, thevertically oriented memory cells being characterized by predominantcurrent flow through individual of the memory cells in a horizontaldirection, the horizontally oriented memory cells being characterized bypredominant current flow through the individual memory cells in avertical direction.
 7. The array of claim 6 comprising more verticallyoriented memory cells than horizontally oriented memory cells.
 8. Thearray of claim 6 wherein there are only five memory cells per unit cell,and there is one horizontally oriented memory cell for every fourvertically oriented memory cells.
 9. The array of claim 6 wherein thereare only six memory cells per unit cell, and there are two horizontallyoriented memory cells for every four vertically oriented memory cells.10. The array of claim 1 wherein the unit cell is a hexahedron havingfour corner volumes extending between two opposing faces of thehexahedron and the five memory cells comprise programmable material, theprogrammable material of four of the memory cells extending from one orthe other of the opposing faces to inside the hexahedron within a singleof the four corner volumes.
 11. The array of claim 10 wherein theprogrammable material of another memory cell other than the four isreceived in the corner volume of the hexahedron diagonally opposite thesingle corner volume.
 12. The array of claim 11 wherein the four memorycells are each vertically oriented and the another memory cell ishorizontally oriented.
 13. The array of claim 10 wherein the unit cellcomprises six memory cells comprising programmable material, theprogrammable material of two memory cells other than the four beingreceived in the corner volume of the hexahedron diagonally opposite thesingle corner volume.
 14. The array of claim 13 wherein the four memorycells are each vertically oriented and the two memory cells arehorizontally oriented. 15-27. (canceled)
 28. An array of verticallystacked tiers of nonvolatile memory cells comprising a continuous volumehaving a combination of a plurality of vertically oriented memory cellsand a plurality of horizontally oriented memory cells, the verticallyoriented memory cells being characterized by predominant current flowthrough individual of the memory cells in a horizontal direction, thehorizontally oriented memory cells being characterized by predominantcurrent flow through the individual memory cells in a verticaldirection.
 29. The array of claim 28 comprising more vertically orientedmemory cells than horizontally oriented memory cells.
 30. The array ofclaim 29 wherein there is one horizontally oriented memory cell forevery four vertically oriented memory cells.
 31. The array of claim 29wherein there are two horizontally oriented memory cells for every fourvertically oriented memory cells.
 32. The array of claim 28 wherein allof the array comprises a combination of a plurality of verticallyoriented memory cells and a plurality of horizontally oriented memorycells.
 33. The array of claim 28 wherein the continuous volume comprisesa combination of entirely vertically oriented memory cells and entirelyhorizontally oriented memory cells.
 34. An array of vertically stackedtiers of nonvolatile memory cells, individual of the vertical tierscomprising: an elevationally outer tier and an elevationally inner tierof respective pluralities of horizontally oriented first electrodelines, the first electrode lines of the outer tier crossing with respectto the first electrode lines of the inner tier; a plurality ofvertically oriented second electrode lines extending through the innertier and the outer tier, individual of the vertically oriented secondelectrode lines extending between immediately adjacent respective pairsof first electrode lines in the inner tier and in the outer tier, theindividual vertically oriented second electrode lines having first andsecond pairs of opposing lateral sides; programmable material betweenthe opposing lateral sides of the first pair and the first electrodelines in one of the inner and outer tiers and between the opposinglateral sides of the second pair and the first electrode lines in theother of the inner and outer tiers; and comprising a repetition of aunit cell, the unit cell being the simplest polyhedron that embodies allstructural characteristics of, and by three-dimensional repetition makesup, a lattice of the array; the array comprising five memory cells perunit cell.
 35. (canceled)
 36. The array of claim 34 comprisingprogrammable material elevationally between individual first electrodelines of the outer tier and individual first electrode lines of theinner tier where such cross.
 37. The array of claim 34 wherein the firstelectrode lines of the outer tier are everywhere elevationally spacedfrom the first electrode lines of the inner tier within the array. 38.The array of claim 37 wherein the first electrode lines of the outertier are elevationally spaced from the first electrode lines of theinner tier at least in part by programmable material between individualfirst electrode lines of the outer tier and individual first electrodelines of the inner tier where such cross. 39-40. (canceled)
 41. Thearray of claim 34 wherein programmable material entirelycircumferentially encircles individual vertically oriented secondelectrode lines within the outer tier.
 42. The array of claim 34 whereinprogrammable material entirely circumferentially encircles individualvertically oriented second electrode lines within the inner tier. 43.(canceled)
 44. The array of claim 34 wherein immediately adjacent pairsof the vertically stacked tiers of memory cells are spaced from eachother at least in part by programmable material received elevationallybetween the first electrode lines of the elevationally inner tier of oneof the pair of immediately adjacent of the vertically stacked tiers ofmemory cells and the first electrode lines of the elevationally outertier of the other of the pair of immediately adjacent of the verticallystacked tiers of memory cells.